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TSV Loaded Ring Oscillators

IP.com Disclosure Number: IPCOM000246631D
Publication Date: 2016-Jun-23
Document File: 1 page(s) / 40K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a circuit to study the high frequency characteristics of the Through Silicon Vias (TSV).

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TSV Loaded Ring Oscillators


Through Silicon Vias (TSV) carry high frequency signals and as such require high frequency characterization of associated properties. Currently, this is done via custom pad sets and custom instrumentation.

Disclosed is a circuit to study the high frequency characteristics of the TSV.

A TSV is added as a load of a standard ring oscillator (RO) design. The additional capacitance reduces the ring speed and standard divider circuitry and counters can easily measure it.

Figure 1: Typical RO (2n + 1) converters

Figure 2: Adding TSV as a load to the RO changes the ring frequency

Using a TSV as a load on the RO (either as a cap or as a series resistance) enables the characterization of the radio frequency (RF) characteristics of TSV.

This is better than S-PARAMETER macros, because there is no need for specialized equipment and provides on-chip signal generation with no parasitics.

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