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Structure and Method to Form Low Schottky Barrier Height Contact in CMOS FinFET Devices

IP.com Disclosure Number: IPCOM000246634D
Publication Date: 2016-Jun-23
Document File: 4 page(s) / 81K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is an integration method to achieve both n- and p-type low contact resistivity in aggressive Complementary Metal Oxide Semiconductor (CMOS) devices. Proposed herein is a dual metal liner trench contact with N-Type metal and P-Type metal on a Germanium (Ge) cap.

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Structure and Method to Form Low Schottky Barrier Height Contact in CMOS FinFET Devices

With aggressively scaled Complementary Metal Oxide Semiconductor (CMOS) devices, it is critical to achieve low 10-9 Ù-cm2 of Source Drain (S/D) contact resistivity to meet and go beyond the performance requirements for 7nm technology devices. Schottky barrier height (SBH) reduction is one method for decreasing contact resistivity.

Nickel Silicide (NiSi) contact has low contact resistivity because of the lower associated SBH; however, NiSi creates "pipe" defects under the sidewall causing S/D shorts and Static Random Access Memory (SRAM) yield loss. It requires controlled thermal treatments after NiSi formation to minimize "pipe" defects.

Titanium Silicide (TiSix) contact, unlike NiSi, does not generate defects, but it degrades device performance due to relatively high contact resistivity. Because TiSix is an n-type metal, it is an issue for positive Field Effect Transistor (PFET) S/D contacts.

The novel solution is an integration method to achieve both n- and p-type low contact resistivity in aggressive CMOS devices. Proposed herein is a dual metal liner trench contact with N-Type metal and P-Type metal on a Germanium (Ge) cap. The advantages of this approach are:


• N-type metals (e.g., Ti, TiSix, HfSix, WSix), Rare-earth metals (e.g., La, Gd, Er, Dy, etc.), Rare-earth metal alloys, and Rare-earth metal silicide, have lower SBH for n-type substrate (SiP) and are relatively stable for high temperature treatments


• P-type metals (e.g., NiPt and Pt), are good for high concentration Ge in the Silicon Germanium (SiGe) cap layer.

Because it is n-type metal first (p-type metal last) processing, it is controlled Ni-related defect generation.

Theoretical...