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Novel Structures to Determine Optimum Material Thickness for Implant Blocking

IP.com Disclosure Number: IPCOM000247619D
Publication Date: 2016-Sep-20
Document File: 3 page(s) / 96K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to simultaneously characterize implant-stopping power for different mask material thicknesses using a single substrate. The solution introduces two novel structures to determine optimum material thickness for implant blocking.

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Novel Structures to Determine Optimum Material Thickness for Implant Blocking

The method to determine the optimal mask thicknesses when implant conditions/mask materials change requires a large number of wafers. Selective area substrate implantation is performed by blocking substrate areas with patterned masks. Determining the optimum mask material thickness to successfully block implants requires implanting multiple wafers coated with different mask thicknesses and characterizing the implant penetration in each wafer.

A thicker than optimal mask, result in an increase in etch times to pattern and poor lithography resolution. A thinner than optimal mask creates implants in masked areas, which lead to device performance degradation.

The novel contribution is a method to simultaneously characterize implant-stopping power for different mask material thicknesses using a single substrate. The solution introduces two novel structures to determine optimum material thickness for implant blocking.

The first novel structure uses a tiled macro design to create trenches of varying depths in the substrate, utilizing Reactive Ion Etching (RIE) lag effect. (Figure 1) The process is to then apply coatings of mask material to achieve several mask thicknesses on the same substrate. (Figure 2) This approach also characterizes implant penetration into substrate in each trench. The optimal mask thickness will be that of a trench in which no implant is detected in the substrate.

The...