Browse Prior Art Database

Structure and Method for Early Defect Detection

IP.com Disclosure Number: IPCOM000247646D
Publication Date: 2016-Sep-22
Document File: 5 page(s) / 105K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed are a structure and method for early defect detection, which entails electrical testing directly after pattern transfer into the metal hardmask.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 56% of the total text.

Page 01 of 5

Structure and Method for Early Defect Detection

Single line open (SLO) is a major yield detractor and can have multiple root causes:

• Litho
• Defects embedded in thin films or from Self-Aligned Double Patterning (SADP)

  spacer etch • Titanium Nitride (TiN) hardmask open etch and clean
• Hardmask open etch during the dual damascene dielectric etch sequence

When facing SLO, it is very hard to detect SLO during the integration flow. An e-scan may have the correct resolution to pick up defect, but can only scan a limited area. Bright field resolution can scan larger areas, but may not be able to pick up small SLO.

Figure 1: Problem

Figure 2: Current art

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Page 02 of 5

The novel contribution is a structure and method for early defect detection. This entails electrical testing directly after pattern transfer into the metal hardmask. The method is to focus on defect reduction of the first steps alone, without becoming involved with additional defect modes in subsequent process modules. This enables a faster turn-around of development cycles.

Figure 3: Solution

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Page 03 of 5

The novel design is for a new, special macro that can be tested directly after metal hardmask open etch (and clean).Any stringer or metallic residue would later evolve into a SLO-defect. These stringers or metallic residues essentially short out adjacent hardmask lines. The solution is to design a special macro that can be directly tested after hardmask open etch to detect metallic residue or...