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New Sacrificial TiOx Hardmask Scheme for Chamferless Via

IP.com Disclosure Number: IPCOM000247648D
Publication Date: 2016-Sep-22
Document File: 3 page(s) / 130K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a new sacrificial TiOx/TiNx hardmask (HM) scheme to improve metal via chamfer performance.

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Page 01 of 3

Title

New Sacrificial TiOx Hardmask Scheme for Chamferless Via

Abstract

Disclosed is a new sacrificial TiOx/TiNx hardmask (HM) scheme to improve metal via chamfer performance.

Problem

With continuous shrink of CD, trench chamfer become a dominant concern to fail point between line to line short.

Figure 1: Prior art


1. Post Trench litho/Reactive Ion Etching (RIE) profile


2. Post Via litho/RIE profile

3. Post N block open profile

4. Post Chemical Mechanical Planarization(CMP)

Figure 2: Issues with current flow

Solution/Novel Contribution



Page 02 of 3

The novel contribution is a new sacrificial Titanium Suboxide/ Titanium nitride (TiOx /TiNx) hardmask (HM) scheme to improve metal via chamfer performance.

Method/Process

By inserting a thin sacrificial TiOx/TiNx HM after trench etch, the trench area is protected by this thin TiOx/TiNx HM during via etch and n-block open. This TiOx/TiNx hardmask is removed by EKC chemical before barrier dep.

The following figures represent the implementation of the solution in a preferred embodiment.

Figure 1: Post trench litho/RIE profile

Figure 2: TiOx liner dep

Figure 3: Post via etch


Page 03 of 3

Figure 4: Post N-block open

Figure 5: Post TiN/TiOx EKC removal

Figure 6: Post CMP

Advantages over Previous Solutions

This method enables a chamferless via and protects the trench side wall in via etch and N-block open.