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Advanced Metal Cap Integration

IP.com Disclosure Number: IPCOM000247704D
Publication Date: 2016-Sep-28
Document File: 4 page(s) / 85K

Publishing Venue

The IP.com Prior Art Database

Abstract

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Advanced Metal Cap Integration

A copper (Cu)/metal interface has better adhesion strength than a Cu/dielectric interface does, which results in better electromigration resistance in the Cu/metal capping layer system.

Figure 1: Selective TiN removal and selective formation of Ti metal capping layer

Figure 2: Post metallization and Chemical Mechanical Planarization

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Figure 3: Surface Nitridation
 Thermal or Plasma


 N2 or NH3


 Temperature: 25 ~ 450 C

Figure 4: Selective removal of Cu nitride


 H2/ He/ N2 mixed


 Thermal or plasma

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Figure 5:Blanket Ti deposition

Figure 6: Thermal anneal and formation of TiN on ILD 12 surface

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Figure 7: Selective wet removal of TiN from ILD surface

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