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Browse Prior Art Database

Advanced Interconnect Structure and Fabrication

IP.com Disclosure Number: IPCOM000247705D
Publication Date: 2016-Sep-28
Document File: 4 page(s) / 56K

Publishing Venue

The IP.com Prior Art Database

Abstract

-To create more uniform air gaps through a homogeneous dielectric damage/strip process. -In contract to the conventional process, the homogeneous dielectric damage/strip process is through sidewall of the Cu features. Deposition of sacrificial liner Deposition of liner barrier materials Metal fill and complete with CMP Remove the sacrificial liner from sidewall of the metal features Damage and strip dielectric through sidewall of the metal features

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Advanced Interconnect Structure and Fabrication

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Objective

-To create more uniform air gaps through a homogeneous dielectric damage/strip process. -In contract to the conventional process, the homogeneous dielectric damage/strip process is through sidewall of the Cu features.

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Another embodiment is to do direct sacrificial liner deposition before barrier deposition.


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Adjustable self-aligned air gap dielectric for low capacitance wiring
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Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence

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