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Method and System for Forming a Resistor and Electronic-Fuse (eFuse) for Self-aligned-contact (SAC) Compatible Structures

IP.com Disclosure Number: IPCOM000247707D
Publication Date: 2016-Sep-28
Document File: 5 page(s) / 98K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system is disclosed for forming a resistor and electronic-fuse (efuse) for self-aligned-contact (SAC) compatible structures by avoiding direct contact between a via and a resistor by establishing a contact through a CB contact plug to via contact. The resistor is formed after a CB contact and plug metallization. Further, the resistor is directly placed on the CB plug. Thus, the CB functions as an interconnection between the via and the resistor as well as a contact plug onto PC.

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Page 01 of 5

Method and System for Forming a Resistor and Electronic -Fuse (eFuse) for Self-aligned-contact (SAC) Compatible Structures

Generally, a resistor and an electronic-fuse (eFuse) are placed on an interlevel dielectric (ILD) layer level, especially on a contact stopper after 28 nanometers (nm) in a technology node. The contact stopper is used as a reactive-ion-etching (RIE) stopper of source-drain (SD) contact (also referred to as CA contact) and a metal resistor (RM). In the structure mentioned above, the metal resistor is connected through a PC contact (CB) and the CB is connected to a via contact. Also, the metal resistor is not exposed to copper in this structure. However, in the prior art, edge technology is using  Self-aligned-contact (SAC) structure which does not have a contact stopper. If RM is placed directly on PC ILD level, planarization occurs along with RIE process control issues. In addition, an exposure of RM tungsten silicide (Wsix) to copper (Cu) via plug causes Cu diffusion that affects reliability as illustrated in FIG. 1 below.

FIG. 1 illustrates a conventional SAC compatible structure.

Figure 1

1


Page 02 of 5

Disclosed is a method and system for forming a resistor and electronic-fuse (eFuse) for self-aligned-contact (SAC) compatible structures by avoiding direct contact between a via and a resistor by establishing a contact through a CB plug to via contact. The resistor is formed after a CB contact and plug metallization. Further, the resistor is directly placed on the CB plug. Thus, the CB functions as an interconnection between the via and the resistor as well as a contact plug onto PC.

FIG. 2 illustrates the SAC compatible structure in accordance with the method and system disclosed herein.

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