Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

EMI and RF Shielding with FAM (Film Assist Mold) Method

IP.com Disclosure Number: IPCOM000248221D
Publication Date: 2016-Nov-10
Document File: 4 page(s) / 443K

Publishing Venue

The IP.com Prior Art Database

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 51% of the total text.

Page 01 of 4

EMI and RF Shielding with FAM (Film Assist Mold) Method

Background

The high frequency electrical devices are susceptible to undesired EMI and RFI, or other inter-device interference, such as capacitive, inductive, or conductive coupling, also known as cross-talk, which can interfere with their operation. A need exists to isolate semiconductor die from EMI, RFI, and other inter-device interference.

Disclosed is a semiconductor device having a shield layer over semiconductor package and manufacturing method thereof. A semiconductor chip is attached on a substrate. The semiconductor chip and the top surface of the substrate are encapsulated by molding material. During the molding process, a shield is provided on the package from top mold chase. The shield is connected through ground line to eliminate EMI and RFI. The shield can isolate semiconductor device from undesired EMI and RFI.

Description

In one embodiment, the present invention is a semiconductor package comprising a substrate, a semiconductor chip attached on the substrate through bump, copper post (Cu-Post) on the substrate to interconnect the shield and ground pad, encapsulation, and a shield attached over the package, which is connected to the Cu-Post to eliminate EMI.


Page 02 of 4

EMI and RF Shielding with FAM (Film Assist Mold) Method

Fig. 2 ~ Fig. 6 shows process of manufacturing method of one embodiment.

Fig. 2 shows flip chip attach phase. A substrate is provided. The substrate includes Cu-post on the top surface of the substrate. The Cu-Post is electrically connected to the bottom ground pad through internal line of the substrate. A semiconductor chip is disposed on the top surface of the substrate. The semiconductor chip is electrically connected to the substrate by bumps.

Fig. 3 ~ 5 shows forming film assist molding (FAM) phase. As shown in Fig. 3, the substrate is mounted on a lower mold chase. The top mold chase includes adhesive film and conductive layer. The adhesive film is attached on the top mold chase and the conductive layer is attached on the film. The conductive layer can be Cu, Al, stainless steel, nickel silver, low- carbon steel, silicon-iron steel, foil, epoxy, conductive resin, and other metals and composites capable of blocking EMI, RFI, and other inter-device interference. The adhesive film can be easily removed from the upper side of conductive layer after encapsulation. The adhesion of the adhesive may be weaken by heat during curing. In Fig. 4, the top mold chase is mounted on the semiconductor package, which is clamped between both mold chases. The Cu-Post is connected to the conductive layer. The molding material is applied into the mold chases. Afterward, the curing is performed to harden the molding material. After curing, as shown in Fig. 5, the top mold chase is departed from the encapsulant. The adhesive layer is separated from conductive layer. The conductive layer remains on the encapsulant and firmly coupled with encapsulant. A semi...