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Stepped Interposer PoP with Cost effective Laser Drilling

IP.com Disclosure Number: IPCOM000248396D
Publication Date: 2016-Nov-24
Document File: 3 page(s) / 293K

Publishing Venue

The IP.com Prior Art Database

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Stepped Interposer PoP with Cost effective Laser Drilling

Background

A common semiconductor device arrangement includes an upper semiconductor package stacked over a lower semiconductor package, i.e. package-on-package (PoP). The upper semiconductor package is typically electrically connected to the lower semiconductor package. Recently a substrate having a stepped feature is emerged to reduce whole package height.

Description

The invented process comprises Cu post and Cu dummy plated on the carrier. After insulation, via holes are formed by laser drill, which contacts to the top surface of Cu-post. The process is expected to reduce drilling cost because only a single laser shot is required to form a shallow via hole. The current process uses multiple laser shots to form deep via holes. Eventually, the invented process quickly and effectively forms high quality via with straight wall without voids. In addition, this greatly reduces dimple issue created in the peripheral region of the bottom side of the via.

Fig. 3 ~ 11 shows manufacturing process of present invention.


Page 02 of 3

Stepped Interposer PoP with Cost effective Laser Drilling

Referring now to Fig. 3, providing a carrier (detach core) phase. The carrier can include core, a carrier top side metal and a carrier bottom side metal. The core can include SUS plate, FR4 plate, or polymer reinforced plate as examples. The carrier top side metal and the carrier bottom side metal are detachable from the core. The carrier top side metal and the carrier bottom side metal are preferably copper.

Fig. 4 shows forming Cu dummy for stepped feature and Cu-post phase. The Cu dummy and Cu-post are formed directly on the detach core at the same time. The Cu dummy position matches the semiconductor position of the bottom package. Cu-post is formed peripheral to Cu-dummy. Plating method is preferably used.

It has been discovered that forming C...