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Structure and Method for Critical Line End and Tip-to-Tip Space Patterning

IP.com Disclosure Number: IPCOM000249086D
Publication Date: 2017-Feb-03
Document File: 5 page(s) / 266K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a novel method for critical line end space patterning for technology nodes.

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Title Structure and Method for Critical Line End and Tip-to-Tip Space Patterning Abstract Disclosed is a novel method for critical line end space patterning for technology nodes. Problem As technology nodes continue to shrink, a critical line tip-to-tip patterning, with minimum space without shortage, becomes not only important, but also an extreme challenge. Solution/Novel Contribution The novel contribution is a method to provide minimum space patterning with a relatively larger cut mask size. The line end is well protected by the all-around cut high density plasma (HDP) Interlayer Dielectric (ILD) film to protect the line tip-to-tip short with minimum tip-to-tip space. This method can also be used to cut multiple direction lines with optimized shape cut masks at the same time. Method/Process The following figures illustrate the components and process for implementing the method in a preferred embodiment. Figure 1: Start with finished sacrificial mandrel line (e.g., Silicon Nitride (SiN) patterning

Figure 2: Deposit ILD (e.g., Ultra-Low K (ULK) and then Chemical-Mechanical Planarization (CMP) to stop on the mandrel

Figure 3: Deposit cap layer (optional) (e.g., Tetraethyl orthosilicate (TEOS) oxide)

Figure 4: Open window and cut mandrel at line end with reverse tone cut

Figure 5: Strip the cut block mask and fill the cut area with ILD, such as HDP oxide, and then CMP to stop on the mandrel

Figure 6: Selective remove the mandrel and trim the cut CD to target d

Figure 7: Fill...