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Dual side EMI shielding process with BGA package

IP.com Disclosure Number: IPCOM000249381D
Publication Date: 2017-Feb-23
Document File: 3 page(s) / 234K

Publishing Venue

The IP.com Prior Art Database

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 55% of the total text.

Dual side EMI shielding process with BGA package

Background

In the current semiconductor industry, for the purpose of a better electromagnetic interference

(EMI) shielding effect, it is required to shield both the top side and the bottom side of ball

grid array (BGA) packages.

A system-in-package (SiP) structure with dual side EMI shielding is shown in Fig. 1. A first

die and a passive device are placed side by side on the top of the substrate and then

encapsulated inside the first mold. A second die is also attached to the bottom of the substrate

and then encapsulated inside the second mold. EMI shield metal is formed on the outside

surfaces of both the first mold and the second mold, of which the process is referred as the

dual side EMI shielding technology.

Fig. 1 the dual side mold SiP structure with dual side EMI shielding

Description

The subject invention discloses a new process to form dual side EMI shielding with BGA

packages. One-step sputtering process is proposed here for higher efficiency and units per

hour (UPH) in the EMI shielding process, which can be done with land grid array (LGA)

loading concept. Solder ball are then mounted by picking-and-placing after the EMI shielding

process.

The processing flow in the subject invention is described in the following. Shown in Fig. 2,

the first step is to form the dual side mold SiP structure in Fig. 1, in which the first die and

the passive device are encapsulated inside the first mold and the second die is encapsulated

inside the second mold.

In the second step, singulated process is applied to the structure above to obtain individual

packages.

In the third step, a first package loading is performed for the sputtering process in the next

step. Polyimide (PI) tape is applied to the bottom surface of each package; and the adjacent

packages are adhered together on the PI tape. Then, laser is used to remove the portion of PI

tape covering the second mold; as a result, an opening is formed on the back surface of the

Dual side EMI shielding process with BGA package

second mold in each package. In this process flow, it is very easy to apply LGA loading

concep...