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Low-Temperature Dielectric with Superior Etch Performance

IP.com Disclosure Number: IPCOM000249601D
Publication Date: 2017-Mar-07
Document File: 3 page(s) / 65K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that delivers a high performance, low temperature Silicon nitride (Si3N4) with high conformality and superior etch performance.

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Low-Temperature Dielectric with Superior Etch Performance

The novel contribution is a method that delivers a high performance, low temperature Silicon nitride (Si3N4) with high conformality and superior etch performance.

The method deposits the SiN 60C, utilizing a microwave radial line slot antenna to generate a remote plasma at 90 mTorr. SiN film properties are dependent on deposition conditions with the SiH4 to NH3 ratio critical in determining the film stoichiometry and refractive index.

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Etch rate of the SiN film is dependent on the refractive index and minimization of NH in the film. The films with less NH and higher refractive index 2.2 and 2.4 have a reduced etch rate in 100:1 HF.

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The film allows integration flows of <100C substrate temperature and >50% conformality while having equivalent, if not better, etch resistance to high temperature deposit counterparts.