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Structure and Method for Multiple Fin SIZE Devices

IP.com Disclosure Number: IPCOM000250217D
Publication Date: 2017-Jun-12
Document File: 2 page(s) / 47K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method of forming devices with different Fin sizes on the same chip. The method modulates Fin thickness via epitaxy that enables a technology with multiple Fin thickness (CD) on the same chip.

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Title Structure and Method for Multiple Fin SIZE Devices Abstract Disclosed is a method of forming devices with different Fin sizes on the same chip. The method modulates Fin thickness via epitaxy that enables a technology with multiple Fin thickness (CD) on the same chip. Problem The current process for Fin formation creates all identical Fins. No opportunity exists to create various Fin-CD devices on the same chip. Figure 1: Fin formation. All Fins are identical, no opportunity to create various Fin-CD device on the same chip.

Solution/Novel Contribution The novel contribution is a method of forming devices with different Fin sizes on the same chip. The method modulates Fin thickness via epitaxy that enables a technology with multiple Fin thickness (CD) on the same chip. Method/Process The approach is to couple the epitaxy process with a pre-etch of Fin that allows Fin thinning from original dimensions to the desired size. Fin_CD modulation offers the advantage of changing VT, optimizing performance, and yielding multiple types of devices on same chip, which is otherwise not available. For example, logic Field Effect

Transistors (FETs) behave better with thinner CD, but memory devices are better with wider Fins. The implementation process follows:

1. Siconi Clean 2. Prebake: 775~800C, 150~600Torr, 30SLM H2 3. HCl bake: 700C, 300Torr, 10SLM H2, 60sccm HCl, 20sccm DCS 4. Epi

A. With or without Buffer B. SiGe:B or Si:P

Advantages over Previous Solutions The novel method allow...