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Contour-Based Model Verification

IP.com Disclosure Number: IPCOM000250220D
Publication Date: 2017-Jun-12
Document File: 4 page(s) / 199K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a new process flow of optical proximity correction (OPC) model verification based on extracted critical dimension scanning electron microscope (CDSEM) contours, to evaluate OPC model calibration quality and deliver a failure analysis.

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Title Contour-Based Model Verification Abstract Disclosed is a new process flow of optical proximity correction (OPC) model verification based on extracted critical dimension scanning electron microscope (CDSEM) contours, to evaluate OPC model calibration quality and deliver a failure analysis. Problem As semiconductor technology nodes advance, optical proximity correction (OPC) model calibration necessitates a higher fraction of two-dimensional (2D) structure input. Solution/Novel Contribution The novel contribution is a new process flow of optical proximity correction (OPC) model verification based on extracted critical dimension scanning electron microscope (CDSEM) contours, to evaluate OPC model calibration quality and deliver a failure analysis. A quad state assessment includes evaluating contour extraction reliability and RMS specification. This flow utilizes statistical analysis of edge placement errors (EPEs) between the CDSEM contour and the model-simulated contour to classify model error types, taking advantage of the two-dimensional (2D) information (e.g., shape, alignment etc.) from the contours. The key features of this approach include: contour extraction, OPC model verification, model error classification, quad state assessment, and statistical analysis of errors. Figure 1: Contour overlay

Method/Process The contour-based model verification process flow follows:

1. Collect CDSEM images of OPC model verification 2. Contour extraction of CDSEM images 3. Contour...