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Long Channel Nanosheet FET on Vertical FET Short Channel Device

IP.com Disclosure Number: IPCOM000250223D
Publication Date: 2017-Jun-12
Document File: 4 page(s) / 133K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to achieve better scaling and performance for all devices using a vertical Fin Field Effect Transistor (FET) for a short channel and a nanosheet FET for a long channel.

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Title Long Channel Nanosheet FET on Vertical FET Short Channel Device Abstract Disclosed is a method to achieve better scaling and performance for all devices using a vertical Fin Field Effect Transistor (FET) for a short channel and a nanosheet FET for a long channel. Problem A Vertical Field Effect Transistor (VFET) can provide better scalability and channel controllability than a nanosheet. However, as a channel is vertically formed, making a long channel device with a Negative FET (NFET) design is difficult, as it requires a different transistor design on the long channel. Developers need a design to meet scaling and performance requirements on a long channel. Solution/Novel Contribution The novel solution is a method to achieve better scaling and performance for all devices using a vertical FinFET for a short channel and a nanosheet FET for a long channel. Figure 1: Novel method

Figure 2: Novel structure: • Vertical FinFET for short channel • Nano-sheet FET for long channel

Method/Process The following figures illustrate cross-sections of the proposed method. Figure 3: Nanosheet formation

Figure 4: Fin patterning

Figure 5: Fin reveal

Figure 6: Contact formation

Advantages over Previous Solutions

• Short channel: Vertical VFET for better scaling • Long channel: Nanosheet FET to provide better performance.