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HETEROLEPTIC AMINOALKOXIDE METAL PRECURSORS FOR DEPOSITION OF METAL CONTAINING FILMS FOR VARIOUS APPLICATIONS

IP.com Disclosure Number: IPCOM000250282D
Publication Date: 2017-Jun-21

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The IP.com Prior Art Database

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HETEROLEPTIC AMINOALKOXIDE METAL PRECURSORS FOR DEPOSITION OF METAL CONTAINING FILMS FOR VARIOUS APPLICATIONS

1.            A metal precursor having the formula (I) or (II):

                 

wherein

-          M is a transition metal with +2 oxidation state selected from Nickel, Cobalt or Manganese

-          R1-R11 are independently selected from H; C1-C4 linear or branched alkyl group; C1-C4 linear, branched, or cyclic alkylsilyl group; C1-C4 alkylamino group; and a C1-C4 linear, branched, or cyclic fluoroalkyl group.

-          n is an integer between 1 and 5

2.            A method of synthesizing the metal containing precursors of formula (I) and (II)

                 

Wherein

-          M is a transition metal with +2 oxidation state selected from Nickel, Cobalt or Manganese

-          R1-R11 are independently selected from H; C1-C4 linear or branched alkyl group; C1-C4 linear, branched, or cyclic alkylsilyl group; C1-C4 alkylamino group; and a C1-C4 linear, branched, or cyclic fluoroalkyl groupand their combinations.

-          n is an integer between 1 and 5

3.            The method of claim 2, wherein the precursor (I) is prepared by reacting MX2Ly with 1 equivalent of Z-aminoalkoxide either in first or second step (Scheme-1) and then with allyl-MgX in either first or second step, where:

      - M is a transition metal with +2 oxidation state selected from Ni, Co, Mn

            - X = Cl, Br or I

            - L is a neutral ligand selected but without limitation from the group             consisting of Tetrahydrofurane, diethylether, dimethoxyethane,       dimethylamine, diethylamine, triphenylphosphine, etc…

            - y is an integer or decimal number between 0 and 5

            - n is an integer number between 0 and 5

            - Z = Li, Na, K 

4.            The method of claim 2, wherein the precursor (II) is prepared by reacting MX2Ly with 1 equivalent of Z-aminoalkoxide either in first or second step (Scheme-2) and then with Z-cyclopentadienyl in either first or second step, where:

                  - M is a transition metal with +2 oxidation state selected from Ni, Co, Mn

            - X = Cl, Br or I

            - L is a neutral ligand selected but without limitation from the group             consisting of Tetrahydrofurane, diethylether, dimethoxyethane,       dimethylamine, diethylamine, triphenylphosphine, etc…

            - y is an integer or decimal number between 0 and 5

            - n is an integer number between 0 and 5

            - Z = Li, Na, K 

5.             A process for the deposition of a metal containing film on a substrate, comprising the steps of:

a)    providing at least one substrate into a reactor;

b)    introducing into the said reactor a vapor of at least one metal-containing precursor having the formula (I) or (II):

(1)  

 , wherein

-          M is a transition metal with +2 oxidation state selected from Ni, Co...