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GROUP 4 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS

IP.com Disclosure Number: IPCOM000250283D
Publication Date: 2017-Jun-21

Publishing Venue

The IP.com Prior Art Database

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GROUP 4 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS

What is claimed is:

1.         A Group 4 transition metal-containing thin film forming precursor having one of the following formulae:

                      

Formula I                                           Formula II

wherein M is selected from Group 4 transition metals consisting of Ti, Zr, or Hf and each R1, R2, R3, R4, R5, and R6 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group except for phenyl, cyclohexyl, pyrrole, pyrazole; a C1-C5 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C5 linear, branched, or cyclic alkylamino group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. In Formula I, R2and R3 may be identical or different. In Formula I, R4and R5 may be identical or different. In Formula II, R3and R4 may be identical or different. In Formula II, R5and R6 may be identical or different.

2.         The Group 4 transition metal-containing thin film forming precursor of claim 1, wherein the Group 4 transition metal-containing thin film forming precursor is selected from the group consisting of:

·         the Group 4 transition metal-containing compound being cyclopentadienylbis(methoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being cyclopentadienylbis(ethoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being cyclopentadienylbis(iso-propoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being cyclopentadienylbis(tert-butoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being pentamethylcyclopentadienylbis(methoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being pentamethylcyclopentadienylbis(ethoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being pentamethylcyclopentadienylbis(iso-propoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being pentamethylcyclopentadienylbis(tert-butoxy)dimethylamidotitanium(IV);

·         the Group 4 transition metal-containing compound being  cyclopentadienylmono(methoxy)bis(dimethylamido)titanium(IV);

·         the Group 4 transition metal-containing compound being  cyclopentadienylmono(ethoxy)bis(dimethylamido)titanium(IV);

·         the Group 4 transition metal-containing compound being  cyclopentadienylmono(iso-propoxy)bis(dimethylamido)titanium(IV);

·         the Group 4 transition metal-containing compound being  cyclopentadienylmono(tert-butoxy)bis(dimethylamido)titanium(IV);

·         the Group 4 transition metal-containing compound being  pentamethylcyclopentadienylmono(methoxy)bis(dimethylamido)titanium(IV);

·         the Group 4 transition metal-containing compound being  pentamethylcyclopentadienylmono(ethoxy)bis(dimethylamido)titanium...