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MANGANESE BETA-DIKETIMINATO PRECURSORS FOR APPLICATIONS IN DEPOSITION TECHNIQUES

IP.com Disclosure Number: IPCOM000250285D
Publication Date: 2017-Jun-21
Document File: 4 page(s) / 143K

Publishing Venue

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MANGANESE BETA-DIKETIMINATO PRECURSORS FOR APPLICATIONS IN DEPOSITION TECHNIQUES

What is the problem solved by the invention?

As integrated circuits reduce in size, barrier layers become a vital component to isolate conductive layers (example Cu) from its surrounding environment to prevent electromigration. These layers have to be thin and well controlled. The ideal deposition takes advantage of a gaseous or liquid precursor for these layers. Manganese has been shown to be well-suited to act as a barrier layer. This invention focuses on the development of a novel manganese precursors for such an application. 

What are the features of the invention that you believe to be novel and the advantages of proposed solution over the existing solutions?

Unprecedented manganese complexes bearing two β–diketiminato ligands with alkyl, SiR3, NR2 and H at nitrogen are oxygen-free, volatile, liquid or solid precursors with good thermal stability. These manganese β-diketiminato precursors are reactive to form pure metal films via thin film metal deposition.  Depending on substituent of these ligands solids and more importantly liquids 22 °C can be made. Initial evaluations, show a very low final residue (<1%) by TGA under open cup conditions and only a slight increase in final residue under closed cup conditions (<1 - 2%). The preliminary results illustrate good thermal stability and volatility.

What are the existing solutions and their drawbacks (list relevant patents where applicable)?

1.    Beta-diketiminate precursors for metal containing film deposition

By Fesit, Benjamin J.; Dussarrat, Christian; Omarjee, Vincent M.; Lansalot-Matras, Clement

From U.S. Pat. Appl. Publ. (2010), US 20100003532 A1 20100107

Forming a metal film on a surface, beta-diketiminate precursors are used consisting of the general formula (beta-diketiminate)M-Y2Ln-x where M is an alkali earth metal, scandium, ytterium, lanthanide, titanium, zirconium of hafnium. L is independently an anionic ligand and Y is a neutral ligand. R1 and R5 are independently methyl, ethyl, isopropyl and tert-butyl while R2, R3 and R4 are independently hydrogen or methyl and n is the valance state of the metal. These precursors do not include the desired metal, managanese.

2.    New metal precursors containing beta-diketiminato ligands

By Dussarrat, Christian; Feist, Benjamin J.

From PCT Int. Appl. (2009), WO 2009095898 A1 20090806

Forming a metal film on a surface, beta-diketiminate precursors are used consisting of the general formula (beta-diketiminate)MLn where M is nickel, cobalt, ruthenium, iridium, palladium, platinum, silver or gold. R1-R5 are independently selected from C1-C4 linear or branched organic groups, hydrogen, alkyl groups, alkylsilyl groups, alkylamide, alkoxide groups or alkylsilylamide groups. Each L is independently selected from the group consisting of a hydrocarbon, an oxygen-containing hydrocarbon, an amine, a polyamine, a bipyridine, an oxygen containing heterocycle, a nitrogen c...