Browse Prior Art Database

Apparatus and process for deposition of hard carbon films (USH0000566)

IP.com Disclosure Number: IPCOM000000562D
Original Publication Date: 1989-Jan-03
Included in the Prior Art Database: 2008-Apr-30
Document File: 6 page(s) / 858K

Publishing Venue

US Statutory Invention Registration (SIRs)

Related People

The United States of America as represented by the United States: OWNER [+5]

Related Documents

USH000566: PATENT [+5]

Abstract

A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.

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United States Patent

USH0000566

Nyaiesh ,   et al.

January 3, 1989


Apparatus and process for deposition of hard carbon films

Abstract

A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.


Inventors:

Nyaiesh; Ali R. (Menlo Park, CA), Garwin; Edward L. (Los Altos, CA)

Assignee:

The United States of America as represented by the United States (Washington, DC)

Appl. No.:

06/804,680

Filed:

December 4, 1985


Current U.S. Class:

427/571 ; 118/50.1; 118/723E; 118/723I; 118/723IR; 118/723R; 427/113; 427/562

Current International Class:

C23C 16/26 (20060101); C23C 16/509 (20060101); B01J 19/08 (20060101); C23C 16/50 (20060101); B05D 003/06 (); C23C 014/00 (); C23C 016/00 ()

Field of Search:

427/38,39,113 118/50.1,723


References Cited


U.S. Patent Documents

 

 

 

3916034

October 1975

Tsuchimoto

4382100

May 1983

Holland

4563367

January 1986

Sherman

 

 

 

Foreign Patent Documents

 

 

 

 

 

 

 

59-205470

 

Nov., 1984

 

JP

 

 

 

 

 

 

Primary Examiner: Terapane; John F.
Assistant Examiner: Wolffe; Susan
Attorney, Agent or Firm:

25Clouse, Jr.; Clifton E. Gaither; Roger S. Hightower; Judson R.


Government Interests



The Government has rights in this invention pursuant to Contract No. DE-AC03-76SF00515 awarded by the U.S. Department of Energy.


Claims



What is claimed is:
1. An apparatus for depositing hard carbon films on a substrate comprising:
a chamber for producing a pressure less than atmospheric;
a cavity contained within the chamber, said cavity having an opening communicating with the chamber;
an RF coil, surrounding the cavity;
a first RF source for exciting the RF coil;
a substrate support located within the chamber, said support located opposite the opening in the cavity and oriented such that the surface of the substrate is generally parallel to the opening in the cavity;
means for electrically biasing the substrate support;
means for introducing gases into the cavity;
means for producing a magnetic field having a direction of maximum field intensity which is generally perpendicular to the surface of the substrate; and
means for evacuating the chamber.
2. The apparatus of claim 1 wherein the means for biasing the substrate carrier comprises a source of RF power.
3. The apparatus of claim 2 wherein the means for biasing the substrate carrier comprises a source of RF power and means for inhibiting d...