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A Structure For Measuring Mass Transport Effects in VLSI Disclosure Number: IPCOM000004360D
Publication Date: 2000-Oct-13

Publishing Venue

The Prior Art Database


A contact holes in Very Large Scale Integration (VLSI) of semiconductors become smaller and smaller, processing effects based upon geometries impact process control. One such effect is gas mass transport, where gas molecules transport differently in very narrow holes versus larger holes. This has the effect of different etch rates on different contact hole sizes. It is difficult in VLSI processing to understand this effect. The proposed structure allows for understanding the mass transport effects by varying the hole size. The varying hole sizes create sub-lithographic images by varying the overlap between two images. Scanning Electron Microscope (SEM) cross sections of the following structure allow quantitative and qualitative analysis.