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MULTI-CHANNEL MOSFETs for HIGH VOLTAGE RESISTANCE

IP.com Disclosure Number: IPCOM000004660D
Publication Date: 2001-Mar-20
Document File: 7 page(s) / 5M

Publishing Venue

The IP.com Prior Art Database

Abstract

To realize high breakdown voltage and low channel resistance (also known as low "on" resistance) for a high voltage MOSFET power device a new structure and process have been devised. This new structure enables the creation of a four terminal MOSFET by using multiple p-channel and n-channel MOSFETs that share the same drain and source terminals, yet maintain separate gate terminals. The structure utilizes the basic mechanism of channel depletion caused by the both side reverse biased p-n junction diode.