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FTIR ANALYSIS OF A NEW HIGH K GATE MATERIAL FOR MOCVD APPLICATIONS

IP.com Disclosure Number: IPCOM000004700D
Original Publication Date: 2001-Apr-12
Included in the Prior Art Database: 2001-Apr-12
Document File: 5 page(s) / 18K

Publishing Venue

Motorola

Related People

Authors:
Victor Vartanian Vernon Cole Kim Reid Laura Mendicino Paul Thomas Brown

Related Documents

Other References:
Semiconductor Industry Association, National Technology Roadmap for Semiconductors: Technology Needs, International SEMA TECH, Austin, TX, 1999. - OTHER M. Schulz, M. Nature, 399, 729 (1999). - OTHER P.A. Packan, Science, 285, 2079 (1999). - OTHER D.A. Muller et al., Nature, 399, 758 (1999). - OTHER M. Ritala, K. Kukli, A. Rahtu, P.I. Raisanen, M. Leskela, T. Sajavaara, J. Keinonen, " Atomic Layer Deposition of Oxide Films with Metal Alkoxides as Oxygen Sources," Science, 288, April 14, 2000, 319. - OTHER [+more]

Abstract

Extractive Fourier transform infrared (FTIR) spectroscopy is used to characterize the deposition rate of a new high dielectric constant metal oxide chemical vapor deposition (MOCVD) material, TN, or tetrakis nitrato titanium [Ti(NO3)4]. The inorganic precursor tetrakis nitrato titanium deposits thin titanium dioxide (dielectric constant 25-30) films. Typical deposition rates ranged from 10-45 Å/min as confirmed by reflectometry measurements. The FTIR is installed downstream of the deposition tool post-pump and uses a 22 m path-length multi-pass cell to extend the detection limits to the low ppm range. Spectral peak intensity of a by-product is found to have very high correlation to the deposition rate.