FTIR ANALYSIS OF A NEW HIGH K GATE MATERIAL FOR MOCVD APPLICATIONS
Original Publication Date: 2001-Apr-12
Included in the Prior Art Database: 2001-Apr-12
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Extractive Fourier transform infrared (FTIR) spectroscopy is used to characterize the deposition rate of a new high dielectric constant metal oxide chemical vapor deposition (MOCVD) material, TN, or tetrakis nitrato titanium [Ti(NO3)4]. The inorganic precursor tetrakis nitrato titanium deposits thin titanium dioxide (dielectric constant 25-30) films. Typical deposition rates ranged from 10-45 Å/min as confirmed by reflectometry measurements. The FTIR is installed downstream of the deposition tool post-pump and uses a 22 m path-length multi-pass cell to extend the detection limits to the low ppm range. Spectral peak intensity of a by-product is found to have very high correlation to the deposition rate.