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LATERAL PROFILED BIPOLAR TRANSISTOR AND IC's

IP.com Disclosure Number: IPCOM000005507D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2001-Oct-10

Publishing Venue

Motorola

Related People

Authors:
Herb Goronkin

Abstract

In bipolar junction transistors, the base current flowing between the intrinsic base region under the emitter (A) to the extrinsic base region (B) in Figure 1 causes a voltage difference VAB' across the resistor rb.' The magnitude of emitter current is controlled by the emitter-base voltage. Since the voltage VEB' is greater than VEA, current at the emitter edge exceeds current at the emitter center (EA). This can be seen by comparing the two exponentials 'EA - ew WEB. Ig (rb + rb')] lEB' - exP [VEB . lBrb] showing how the current at point B' can greatly exceed the current at point A [l].