IMPROVED PROCESS FOR SELF-ALIGNED SCHOTTKY MOSFET
Original Publication Date: 1985-Oct-01
Included in the Prior Art Database: 2001-Oct-16
It is highly desirable in the integrated circuit art to produce MOSFETs in which the source and drain contacts are self-aligned to the gate contact and whose positioning with respect to the gate contact is precisely controlled. The following describes an improved process for producing self-aligned MOSFETs in which the source drain regions are provided by silicide Schottky barriers.