Method For Processing A Substrate
Original Publication Date: 2001-Oct-17
Included in the Prior Art Database: 2001-Oct-17
A semiconductor substrate having an exposed semiconductor surface is placed into a processing chamber at a first temperature and the processing chamber is evacuated to a pressure greater than approximately 0.10 Torr. The chamber temperature is then increased to a second temperature while flowing a non-reactive gaseous species into the processing chamber. The temperature of the processing chamber is then adjusted to a third temperature, wherein the third temperature is a processing temperature at which a layer is formed over the exposed semiconductor surface. A source gas is then flowed into a processing chamber and a layer is formed over the exposed semiconductor surface. In accordance with one embodiment, the layer includes a semiconductor layer, such as silicon or epitaxial silicon. In accordance with another embodiment the layer includes a high-k dielectric layer.