Browse Prior Art Database

AN IMPROVED SIDEWALL BASE CONTACT TRANSISTOR

IP.com Disclosure Number: IPCOM000005629D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2001-Oct-22
Document File: 2 page(s) / 75K

Publishing Venue

Motorola

Related People

Authors:
Gary J. Seiter

Abstract

Advanced sidewall base contact bipolar transistors can be improved by utilizing a silicon-on-insulator (SOI) process. This process will eliminate all collector-substrata junction capacitance and thus improve device performance.