TUNNELING BASE CONTACT FOR PEDESTAL TRANSISTORS
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2001-Oct-22
Advanced bipolar devices built with sidewall contacts and utilizing a selective epitaxial growth (SEG) process can be improved by adding a process step which forms a thin tunneling nitride film on the sidewall base contact. This nitride may be fabricated by a thermal nitridation of the exposed polysilicon prior to the SEG and will prevent the formation of polysilicon protrusions during SEG.