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TUNNELING BASE CONTACT FOR PEDESTAL TRANSISTORS

IP.com Disclosure Number: IPCOM000005633D
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2001-Oct-22

Publishing Venue

Motorola

Related People

Authors:
Gary J. Seiter Raymond M. Roop

Abstract

Advanced bipolar devices built with sidewall contacts and utilizing a selective epitaxial growth (SEG) process can be improved by adding a process step which forms a thin tunneling nitride film on the sidewall base contact. This nitride may be fabricated by a thermal nitridation of the exposed polysilicon prior to the SEG and will prevent the formation of polysilicon protrusions during SEG.