THREE-DIMENSIONAL SILICON ON OXIDE DEVICE ISOLATION
Original Publication Date: 1987-Oct-01
Included in the Prior Art Database: 2001-Oct-23
A novel technique has been devised for achieving full 3-D deviceoxide isolation by utilizing a partially masked oxygen ion implant into a silicon substrate to produce a modified silicon-on-insulator (SOI) structure. This ap preach may be utilized with either field effect or junction device technology to eliminate deleterious device interactions such as regenerative latch-up and transient upset.