RADIATION HARDENING TECHNIQUE
Original Publication Date: 1988-Oct-01
Included in the Prior Art Database: 2001-Oct-29
A method for radiation hardening semiconductor devices has been devised. A heavy P+. doping in the field region will improve the radiation hardening of a MOS device by preventing inversion. However, a light P doping is provided near the source/drain of a device to prevent a degradation of the breakdown voltage. The new method proposed will improve the radiation hardening of the device, without degrading the breakdown voltage.