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REVERSE STRESS PROTECTION FOR THE EMITTER-BASE JUNCTON OF ECL GATES

IP.com Disclosure Number: IPCOM000005706D
Original Publication Date: 1988-Oct-01
Included in the Prior Art Database: 2001-Oct-29

Publishing Venue

Motorola

Related People

Authors:
Bor Yuan Hwang

Abstract

Diodes 1 and/or 2 are provided in the ECL gates of figures 1 and 2 for reducing the reverse voltage across the base-emitter junction of transistor 1 when the input is open.