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Nitrogen Incorporation in Inter-Poly Dielectric and Gate Oxide For Improved NVM and Logic Reliability

IP.com Disclosure Number: IPCOM000005724D
Original Publication Date: 2001-Oct-30
Included in the Prior Art Database: 2001-Oct-30

Publishing Venue

Motorola

Related People

Authors:
Zhixu Zhou1 Wayne Paulson2 James Heddleson3

Abstract

Nitrogen Incorporation in Inter-Poly Dielectric and Gate Oxide For Improved NVM and Logic Reliability