Browse Prior Art Database

CONSTANT VD - ID PROGRAMMING OF EPROM MEMORY CELLS

IP.com Disclosure Number: IPCOM000005767D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2001-Nov-05
Document File: 2 page(s) / 124K

Publishing Venue

Motorola

Related People

Authors:
I.A. Lesk James Whitfield Charles Varker

Abstract

It is customary to program an EPROM element by applying drain and control gate biases (relative to the source) such that hot electrons generated in the substrate near the Si-SiOz interface surmount the interface barrier, and drift to the floating gate in the oxide electric field. The purpose of this paper is to show that fastest programming of an EPROM with a given channel length can be accomplished by controlling the gate voltage such that drain current stays relatively constant.