LOCAL RESIST COAT PLANARIZATION OF ALIGNMENT TARGETS
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2001-Nov-05
Planarization structures in proximity to alignment targets act to minimize alignment variation caused by asymmetrical photoresist coating of alignment target features. Asymmetric resist pileups on target features are prevented by dummy border pattern placement, helping to stabilize alignment shifts caused by asymetric alignment light absorption, asymmetric signal reflection, and local variations in the resist's index of refraction.