HIGH SIDE DRIVER FET LOAD-DUMP PROTECTION
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2001-Nov-07
It is desirable to turn a high-side drive automotive FET switch 'on'during overvoltage transients such as load dump in order to protect the FET This prevents the FET from exceeding its rated drain to source voltage. To limit device power dissipation, it is desirable to not just clamp V,, but to turn the FET on so that the load dump energy is dissipated in the load. In an application such as Figure 1 with no explicit ground pin, it is dif- ficult to detect a load dump when switch Sl is open.