Browse Prior Art Database

HIGH SIDE DRIVER FET LOAD-DUMP PROTECTION

IP.com Disclosure Number: IPCOM000005798D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2001-Nov-07
Document File: 2 page(s) / 72K

Publishing Venue

Motorola

Related People

Authors:
John Qualich

Abstract

It is desirable to turn a high-side drive automotive FET switch 'on'during overvoltage transients such as load dump in order to protect the FET This prevents the FET from exceeding its rated drain to source voltage. To limit device power dissipation, it is desirable to not just clamp V,, but to turn the FET on so that the load dump energy is dissipated in the load. In an application such as Figure 1 with no explicit ground pin, it is dif- ficult to detect a load dump when switch Sl is open.