Browse Prior Art Database

CAPACITOR ELECTRODE FORMATION VIA EPITAXIAL LATERAL OVERGROWTH (ELO)

IP.com Disclosure Number: IPCOM000005870D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2001-Nov-13

Publishing Venue

Motorola

Related People

Authors:
Mark D. Griswold Shane R. Chilton Frank R. Myers

Abstract

Epitaxial Lateral Overgrowth has been demonstrated to be aviable approach to solve future device isolation demands as well as holding promise for 3-dimensional integration [1,2,3,4,5,6]. EL0 is the process whereby silicon islands are created by depositing epitaxial silicon seeded in oxide openings (fig. 1.) and relying on the subsequent overgrowth of the epi with respect to the oxide window.