CAPACITOR ELECTRODE FORMATION VIA EPITAXIAL LATERAL OVERGROWTH (ELO)
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2001-Nov-13
Epitaxial Lateral Overgrowth has been demonstrated to be aviable approach to solve future device isolation demands as well as holding promise for 3-dimensional integration [1,2,3,4,5,6]. EL0 is the process whereby silicon islands are created by depositing epitaxial silicon seeded in oxide openings (fig. 1.) and relying on the subsequent overgrowth of the epi with respect to the oxide window.