AUTOMATED CREATION OF MASK DATA FOR INTERMEDIATE PLANARIZATION LAYERS
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2001-Nov-15
During processing of multi-layer structures, the wafer surface often becomes non-planar as shown by the FIG 1 cross-section where the first metal lines are represented by SO8 It is known that the wafer can be replanarized if photoresist is disposed in selected low areas of the dielectric isolation with a mask layer depicted as S08N herein. However, some digitizing applications require extremely long periods of time for hand creation of mask layers and therefore are not feasible. A technique for automatically generating the S06N mask from the SO8 mask data has been developed. The S08N mask data is digitized as non-hierarchial data because of the many design constraints that the mask data must follow.