IN SITU GENERATION OF SiC14 FOR TRENCH PROFILE CONTROL DURING R.I.E
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2001-Nov-20
Trenches etched in silicon, for use in isolation, capacitors, or as device locations, require a profile with smooth, straight (non-bowed) sidewalls and rounded bottoms. The smooth walls are necessary to ensure oxide integrity, straight walls allow refilling without voids, and rounded bottoms prevent slipplane dislocations in the device active area caused by trench sidewall oxidation.