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IN SITU GENERATION OF SiC14 FOR TRENCH PROFILE CONTROL DURING R.I.E

IP.com Disclosure Number: IPCOM000005959D
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2001-Nov-20
Document File: 2 page(s) / 118K

Publishing Venue

Motorola

Related People

Authors:
Frederick J. Robinson Francine Y. Robb

Abstract

Trenches etched in silicon, for use in isolation, capacitors, or as device locations, require a profile with smooth, straight (non-bowed) sidewalls and rounded bottoms. The smooth walls are necessary to ensure oxide integrity, straight walls allow refilling without voids, and rounded bottoms prevent slipplane dislocations in the device active area caused by trench sidewall oxidation.