A HIGH CONTRAST NEGATIVE E-BEAM RESIST PROCESS FOR THE AEBLE-150 DIRECT-WRITE SYSTEM
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-10
The application of direct-write E-beam lithog- raphy using an AEBLE 150 depends heavily upon resist sensitivity. If the resist is not sensitive, large layer to layer misalignments can result due to the space charge regions set up in the resist patterning layer from the large deposited charge. This charge induced misalignment effect is especially prevalent when carrying out circuit interconnect layouts on advanced Bipolar device backends.