Browse Prior Art Database

INTERFACE HARDENING BY IMPLANTING F OR CL INTO SACRIFICIAL OXIDE

IP.com Disclosure Number: IPCOM000006169D
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-11
Document File: 1 page(s) / 54K

Publishing Venue

Motorola

Related People

Authors:
Hsing-Huang Tseng Bich-Yen Nguyen Jim Pfiester

Abstract

DEFINITION OF THE PROBLEM Device degradation by hot-carrier injection (HCI) is one of the most serious problems in short-channel MOSFET reliability.