Browse Prior Art Database

DEEP TRENCH SUBSTRATE CONTACTS SELF-ALIGNED TO TRENCH ISOLATION

IP.com Disclosure Number: IPCOM000006170D
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-11
Document File: 2 page(s) / 65K

Publishing Venue

Motorola

Related People

Authors:
Kent J. Cooper Bich-Yen Nguyen Wayne Ray Scott Roth Barbara Vasquez

Abstract

Advanced Bipolar devices use trench isolation to increase both circuit density and device performance. In addition, some advanced Bipolar designs also require trench substrate contacts. Previously, the silicon trenches for device isolation and substrate contacts were fabricated with two separate etch steps. Using the following process, both isolation and substrate contact trenches are fabricated with a single etch step.