DEEP TRENCH SUBSTRATE CONTACTS SELF-ALIGNED TO TRENCH ISOLATION
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-11
Advanced Bipolar devices use trench isolation to increase both circuit density and device performance. In addition, some advanced Bipolar designs also require trench substrate contacts. Previously, the silicon trenches for device isolation and substrate contacts were fabricated with two separate etch steps. Using the following process, both isolation and substrate contact trenches are fabricated with a single etch step.