Browse Prior Art Database

A HIGH CONTRAST POSITIVE E-BEAM RESIST PROCESS

IP.com Disclosure Number: IPCOM000006184D
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-12
Document File: 4 page(s) / 154K

Publishing Venue

Motorola

Related People

Authors:
C.M. Brown J.N. Helbert

Abstract

The application of direct-write E-beam lithogra- phy using an AEBLE 150 depends heavily upon resist sensitivity. If the resist is not sensitve, large layer to layer misalignments can result due to the space charge regions set up in the resist patterning layer from the large deposited charge. This charge induced misalign- ment effect is especially prevalent when positive resists are used to define contacts or via cuts in moder- ate to thick dielectric layers.