Browse Prior Art Database

SUMMARY OF TRENCH TOP SIDE SUBSTRATE CONTACT TECHNOLOGY-PROCESS TECHNIQUES FOR DOPING TRENCH FILL

IP.com Disclosure Number: IPCOM000006218D
Original Publication Date: 1991-Jul-01
Included in the Prior Art Database: 2001-Dec-14

Publishing Venue

Motorola

Related People

Authors:
Sam L. Sundaram Juergen Foerstner Peter Zdebel

Abstract

Substrate top side contact using deep trenches are becoming essential for high performance VLSI tech- nology. Top side contacts unlike conventional bottom substrate contacts should ease packaging constraints for multi-pin TAB and PGA (flip chip) high perfor- mance packages that are used in advanced ECL/BIC- MOS products. This also eases cooling issues for ECL products where the substrate is at -5.2V (electri- cal hazard). The deep narrow trenches used here as top side substrate contacts would form a solid ground between devices (better RF shield) and can be used for power/logic ICs. Being narrow trenches of submicron dimension, this approach would improve packaging density unlike diffused top side contacts. So the appli- cation of top side substrate contact is numerous encompassing ECL, BICMOS, Power ICs, Power hun- gry CMOS and ASIC products.