Browse Prior Art Database

ORGANIC SPACER TECHNOLOGY

IP.com Disclosure Number: IPCOM000006392D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2001-Dec-31
Document File: 1 page(s) / 42K

Publishing Venue

Motorola

Related People

Authors:
Jeff Pease

Abstract

Sidewall spacer technology is well known in the semi- conductor art and typically employs inorganic confor- mal layers from which spacers are formed. Spacers are commonly used in lightly doped drain (LDD) and tine geometry applications. Although respectable selectivity may be obtained using common inorganic materials such as polysilicon, oxides and nitrides, the underlying semi- conductor tilms are often damaged and improvements in spacer technology are necessary.