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A METHOD TO REDUCE THE RADIAL RESISTIVITY GRADIENT OF (111) AS-GROWN SILICON CRYSTAlLS

IP.com Disclosure Number: IPCOM000006443D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2002-Jan-03
Document File: 1 page(s) / 60K

Publishing Venue

Motorola

Related People

Authors:
Herng-Der Chiou

Abstract

The radial resistivity gradient (RRG) of (111) crys- tals is about double the RRG values of (100) crystals. The reason is that during (111) crystal growth, the center of the crystal tends to grow laterally and forms (111) facet planes. The rate of dopants incorporated into the solid is much higher in the (111) fast lateral planes than the other crystal planes resulting in the higher dopant in the center of the crystals.