A METHOD TO REDUCE THE RADIAL RESISTIVITY GRADIENT OF (111) AS-GROWN SILICON CRYSTAlLS
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2002-Jan-03
The radial resistivity gradient (RRG) of (111) crys- tals is about double the RRG values of (100) crystals. The reason is that during (111) crystal growth, the center of the crystal tends to grow laterally and forms (111) facet planes. The rate of dopants incorporated into the solid is much higher in the (111) fast lateral planes than the other crystal planes resulting in the higher dopant in the center of the crystals.