A WAFER LEVEL HOT CARRIER RELlABILlTY SCREENING TEST FOR BIPOLAR TRANSISTORS
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2002-Jan-07
A major reliability issue for high performance bipo- lar transistors is the reduction of forward current gain (hfe) resulting from hot carrier (HC) generation during operation of the emitter-base pn junction. In BiCMOS curcuits where analog inputs are used to drive bipolar gates such as in digital converters, operational amplii- ers and comparators, the emitter-base junction can be subjected to periodic reverse bias stress which can degrade its operational characteristics.