ETCHING AND DEPOSITING OF MATERIALS WITH A RF POWERED TIP
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2002-Jan-09
Plasma processing is well established as a means of etching and depositing dielectrics, semiconductors, met- als and polymers etc. In general, in these processes, the substrate under processing was exposed to a large vol- ume of plasma when we compare the size of the sub- strate to the size of the plasma. Hence, broad area processing is the focus of these applications. The focus of these applications, therefore, is uniformity etc. How- ever, chances arise, such as when in process diagnosis or process development, the abiity to alter localized stmc- tures of a substrate, say an integrated circuit, is very desirable for, for example, failure analysis purposes. Con- ventional plasma processing apparatus and technique are not applicable in this case. It is desirable to have a method with the capability of etching and depositing materials within selected localized areas. The method could also provide an integrated method of fabricating devices, such as transistors, diodes, capacitors etc., in a small designated area on a substrate. It will serve as a method of developing or repairing packages for devices and circuits, such as high density multi-level packages.