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Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This invention uses a buried etchstop layer in the via dielectric to provide via bottom size control as well as minimizing the capacitive effects of the etchstop layer.
Motorola Inc. 01/10/02
English (United States)
This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
100% of the total text.
Partial Via-First Dual Inlaid Integration With Buried
This invention uses a buried etchstop layer in the via
dielectric to provide via bottom size control as well as minimizing the
capacitive effects of the etchstop layer.
An extra etchstop layer is added just above the normal via
etchstop layer. The layer labeled
“ESL 1” in the picture below can be made as thin as possible, since it’s only
function is as a copper barrier.
This minimizes the fringing capacitance of the metal below. The layer labeled “ESL 2” is where the
via etch needs to stop, so it can be a little thicker without affecting the
The via etch stops on ESL 2. Then, when the metal trenches are etched, ESL acts as a
hardmask to transfer the via pattern down to ESL 1. This maintains the correct via size while the portion of the
via above ESL 2 is tapered during the trench etch. Buried hardmasks are often more effective than surface
etchstops because they’re shielded from much of the physical ion bombardment
that erodes corners. When the
etches are complete, the via bottom is the desired size, with minimal taper,
and the upper portion of the via is tapered, which makes filling it easier.