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Partial Via-First Dual Inlaid Integration With Buried Etchstop Disclosure Number: IPCOM000006508D
Original Publication Date: 2002-Jan-11
Included in the Prior Art Database: 2002-Jan-11

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Brad Smith


This invention uses a buried etchstop layer in the via dielectric to provide via bottom size control as well as minimizing the capacitive effects of the etchstop layer.