Browse Prior Art Database

AC MEASUREMENT OF MESFET RECESS PARAMETERS

IP.com Disclosure Number: IPCOM000006519D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2002-Jan-11
Document File: 1 page(s) / 80K

Publishing Venue

Motorola

Related People

Authors:
J. Michael Golio George B. Norris

Abstract

Conventional GaAs MESFET fabrication involves a recess gate etch step which must be tightly controlled. This etch is done to (1) increase breakdown voltage, (2) reduce access resistance and (3) improve the effective doping protile of the implanted active area Unfortunately, the control required to effectively implement this proc- ess step is often greater than can be accomplished in a high yield manufacturing environment.