Publishing Venue
The IP.com Prior Art Database
Abstract
Disclosed is a method of controlling thermal interface material bond-line thickness to reduce thermal resistance in a semiconductor package. Benefits include reduced impedance, reduced filler size, and reduced resistance.
Method of controlling thermal interface material bond-line
thickness to reduce thermal resistance in a semiconductor package
Disclosed is a method of controlling thermal interface material
bond-line thickness to reduce thermal resistance in a semiconductor package.
Benefits include reduced impedance, reduced filler size, and reduced
resistance.
Background
Heat
removal becomes a challenge as die power consumption, size, and heat density
increases with every new generation of microprocessors. Thermal interface
materials are used to effectively dissipate heat and hence reduce thermal
resistance of the package.
Conventional
solutions control bond line thickness through process parameters such as
dispensed material weight and applied force. However, these techniques do not
produce consistent and predictable bond line thickness and thermal performance.
General description
The
disclosed method reduces and controls the maximum thermal interface material
filler size to achieve stable and thinner bond line thickness, resulting in
lower thermal impedance. Reduced filler size improves thermal resistance by up
to 25%.
The key elements of the method include
the use of thermal interface material with metal or ceramic filler for bond line thickness control.
Advantages
The
technical advantage of the disclosed method is to control the thermal interface
material bond line thickness to improve thermal impedance by an in-place
material design solution. When the maximum size of the filler is reduced and
tightly controlled, the bond line thickness...